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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.2A EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 10V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
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Overview
The ROHM Semiconductor EM6K7T2CR is a dual N-channel MOSFET array housed in an SOT-563-6 (EMT6) surface-mount package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 200 mA. The device exhibits a typical on-resistance of 800 mOhms at a gate-source voltage of 1.2 V, with a threshold voltage of approximately 1 V. Power dissipation is rated at 150 mW, supporting an operating temperature range from -55°C to +150°C. Switching characteristics include rise and fall times of 10 ns, with a minimum forward transconductance of 200 mS.
Feature Summary
- Dual N-channel configuration within a compact SOT-563-6 footprint
- Optimized for low-voltage drive applications at 1.2 V
- Enhancement mode operation with fast switching speeds
Applications
- Low-voltage signal switching circuits
- Portable battery-powered electronic devices
- General-purpose logic level translation
Procurement Notes
Verify the specific suffix 'T2C' against the manufacturer's official datasheet to confirm tape-and-reel packaging and binning specifications. Ensure the component meets RoHS compliance requirements for the target market. Cross-reference the Mouser part number 755-EM6K7T2R to validate distributor inventory status and authenticity before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET is required for 20 V applications driven by low logic levels around 1.2 V. The 800 mOhm on-resistance suits low-current loads up to 200 mA. Compare against the EM6K7T2R variant if different packaging or slight parameter variations are acceptable. Ensure the SOT-563-6 package fits the PCB layout constraints.
Part Context
This part belongs to the EM6K7 series of low-voltage dual N-channel MOSFETs manufactured by ROHM Semiconductor. These devices utilize micro-processing technology to achieve low on-resistance in small packages. The series targets portable electronics where space saving and low power consumption are critical design parameters.
Replacement Considerations
The EM6K7T2R is a related variant within the same series. Verify pinout compatibility and exact electrical parameter tolerances before substitution. No other direct public substitutes are confirmed.
