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The EMF33T2R is a dual digital transistor manufactured by ROHM Semiconductor, integrating one PNP and one N-Channel MOSFET within an EMT6 surface-mount package. The device features a rated voltage of 12V for the PNP section and 30V for the N-Channel section. It supports collector currents of 500mA for the PNP and 100mA for the N-Channel. Key electrical parameters include a transition frequency of 250MHz for the PNP and 260MHz for the N-Channel, with a maximum power dissipation of 150mW.
Verify the specific suffix and manufacturer documentation to confirm the exact pinout and electrical characteristics, as variations may exist across different production batches or distributor listings. Ensure compatibility with the target circuit's voltage and current requirements before finalizing procurement decisions.
Select this component when a combined PNP and N-Channel solution is required for space-constrained designs. Consider the 150mW power dissipation limit and the specific voltage ratings of 12V and 30V to ensure reliable operation within the intended application environment.
This part belongs to ROHM's family of digital transistors, which combine internal bias resistors with bipolar or MOS transistors to simplify circuit design. The EMF33T2R specifically offers a mixed configuration, providing both PNP and N-Channel functionalities in a single package for versatile switching needs.
The EMF21T2R is a documented alternative from the same manufacturer, featuring a similar EMT6 package but with different current and voltage specifications (50V/12V). Verify pin compatibility and electrical limits before substitution.