EMH2308-TL-E

FET, MOSFET Arrays Overview

The EMH2308-TL-E is a P-channel enhancement-mode MOSFET manufactured by onsemi. It features a maximum drain-to-source voltage of 12 V and a continuous drain current of 5 A. The device utilizes an EMH surface-mount package with eight pins. Key electrical parameters include a maximum drain-to-source on-resistance of 200 mΩ, a maximum gate threshold voltage of 1.3 V, and a maximum power dissipation of 1 W. The component supports a maximum operating temperature of +150 °C.

FET, MOSFET Arrays Feature Summary

• P-channel enhancement mode operation for switching applications
• Low on-resistance to minimize conduction losses
• Compatible with low-voltage drive signals

FET, MOSFET Arrays Applications

• General-purpose switching devices
• Power management circuits requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability data consistent with onsemi quality standards. Confirm RoHS compliance status through official material declarations prior to integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when a P-channel MOSFET with a 12 V rating and 5 A current capacity is required in an 8-pin surface-mount configuration. Evaluate thermal performance based on the 1 W power dissipation limit and the specific PCB copper area available for heat sinking during operation.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal and logic-level MOSFETs designed for high-density mounting. The EMH package allows for efficient use of board space compared to larger through-hole alternatives. It serves as a discrete solution for low-voltage DC-DC conversion and load switching tasks.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 12 V/5 A rating, P-channel type, and 8-pin EMH footprint. Verify that substitute components maintain equivalent on-resistance and gate threshold voltage characteristics to ensure circuit compatibility.