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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3A 8EMH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：85mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：320 pF @ 10 V
- FET Feature：Schottky Diode (Isolated)
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-EMH
- Package / Case：8-SMD, Flat Leads
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Overview
The EMH2801-TL-H is a single-channel P-Channel Power MOSFET from onsemi, housed in an EMH8 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 3 A. The device exhibits a maximum on-resistance of 85 mΩ at room temperature. Integrated within the composite structure is a Schottky barrier diode to enhance switching performance. The component supports surface-mount installation and operates with a gate-source voltage range of ±12 V.
Feature Summary
- Composite design integrating a P-Channel Silicon MOSFET with a Schottky Barrier Diode
- Low on-resistance for efficient power handling in compact applications
- High-speed switching capability suitable for industrial control systems
Applications
- Industrial control systems
- Motor drives
- Power management circuits requiring synchronous rectification
Procurement Notes
Verify the specific suffix TL-H against official datasheets to confirm pinout and thermal characteristics. Confirm availability status as this part may be obsolete; check for active replacement components if production continuity is required. Ensure the EMH8 package dimensions match the PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component for low-voltage, high-current applications where space efficiency is critical. The integrated Schottky diode reduces external component count compared to discrete solutions. Evaluate thermal dissipation capabilities based on the 85 mΩ resistance and expected load currents to ensure reliable operation within the specified temperature range.
Part Context
This device belongs to onsemi's EMH series of power MOSFETs, designed for high-performance applications. The EMH8 package provides a compact form factor suitable for dense PCB layouts. It is distinct from other onsemi MOSFETs by its specific combination of 20V rating and integrated diode functionality.
Replacement Considerations
Check for active substitutes such as EMH2412-TL-H or similar P-Channel MOSFETs in the EMH8 package. Verify that replacement parts maintain compatible voltage, current, and resistance specifications.
