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The EMT1FHAT2R is a dual NPN general-purpose amplifier transistor manufactured by ROHM Semiconductor. It features two separate elements housed in a compact SOT-563 (EMT6) surface-mount package. The device supports a maximum collector current of 0.15 A and a collector-emitter voltage rating of 50 V. It exhibits a minimum DC current gain (hFE) of 120, ensuring reliable amplification performance. The component is RoHS compliant and operates within standard industrial temperature ranges, making it suitable for various electronic circuit applications requiring small-form-factor discrete semiconductors.
Verify the exact part number suffix against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any specific automotive or industrial qualification requirements relevant to the target application environment before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a minimal footprint. Compare the 50 V collector-emitter voltage and 0.15 A current limits against circuit demands. Consider the SOT-563 package dimensions for thermal management and board space constraints relative to alternative single-transistor solutions.
This component belongs to ROHM's lineup of general-purpose discrete transistors. It utilizes the EMT6 package code, corresponding to the industry-standard SOT-563 form factor. The product falls under the broader category of bipolar junction transistors designed for low-power amplification and switching tasks in portable and stationary electronic devices.
Consult ROHM datasheets for direct pin-compatible alternatives within the same EMT6 package family. Verify electrical parameter equivalence, specifically hFE ranges and voltage ratings, when evaluating cross-brand substitutes from other semiconductor manufacturers.