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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 50V 150MA EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：150mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Power - Max：150mW
- Frequency - Transition：140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
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Overview
The EMT2T2R is a dual NPN bipolar junction transistor (BJT) manufactured by ROHM Semiconductor, housed in an SOT-563 surface-mount package. It integrates two independent NPN transistors within a single compact unit to reduce circuit board area and mounting costs. The device supports a collector-emitter voltage of 50V and a continuous collector current of 150mA per element. With a DC current gain (hFE) ranging from 120 to 560, it is designed for general-purpose small-signal amplification applications.
Feature Summary
- Integrates two independent NPN transistor elements to eliminate interference between components.
- Reduces mounting costs and PCB footprint compared to using discrete individual transistors.
- Compatible with standard automatic mounting machines for efficient surface-mount assembly.
Applications
- General-purpose small-signal amplification circuits
- Switching applications requiring compact dual-transistor configurations
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging configuration. Confirm RoHS compliance status as required by project specifications. Check supply status for availability constraints. Validate package dimensions against PCB layout requirements. Ensure storage temperature limits are respected during handling.
Selection Notes
Select this component when space-saving dual NPN configurations are required. Compare hFE ranges against circuit gain requirements. Verify voltage and current ratings exceed maximum operational loads. Consider thermal dissipation capabilities relative to ambient conditions. Evaluate compatibility with existing automated assembly processes.
Part Context
This part belongs to ROHM's series of dual bipolar transistors designed for high-density electronics. It serves as a direct replacement for older discrete dual-transistor solutions. The product line emphasizes miniaturization and manufacturing efficiency for consumer and industrial devices.
Replacement Considerations
The EMX1 is listed as a similar level alternative with identical electrical specifications and package dimensions. Verify pinout compatibility before substitution. Confirm that the substitute meets all environmental and reliability standards required by the original design.
FAQ
What is the maximum collector-emitter voltage for each transistor?
The maximum collector-emitter voltage (Vceo) for both transistors is 50V.
Are the two transistors electrically isolated from each other?
Yes, the transistor elements are independent, which eliminates interference between them.
What is the typical DC current gain range?
The DC current gain (hFE) typically ranges from 120 to 560.
