EMT51T2R

Overview

The EMT51T2R is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It contains two independent NPN transistors designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter voltage (VCEO) of 20 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 200 mA with a maximum power dissipation of 150 mW. It features a gain-bandwidth product (fT) of 350 MHz and a minimum DC current gain (hFE) of 120 at 1 mA and 2 V. The component operates within a temperature range up to +150°C and complies with RoHS standards.

Feature Summary

• Dual independent NPN transistor configuration eliminates interconnection requirements
• Surface-mount SOT-563-6 packaging reduces mounting area and cost
• High-speed switching capability with 350 MHz gain-bandwidth product
• Lead-free and RoHS compliant construction

Applications

• General-purpose signal switching circuits
• Logic interface buffering stages
• Low-power amplifier configurations

Procurement Notes

Verify the specific suffix 'T2R' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the SOT-563-6 footprint matches the target PCB design constraints. Ensure thermal management strategies account for the 150 mW power dissipation limit under expected operating conditions. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or recommended operating parameters before finalizing the bill of materials.

Selection Notes

Select this component when space-constrained designs require two isolated NPN transistors in a single compact package. It is suitable for applications needing moderate current handling up to 200 mA and voltage ratings of 20 V. Consider the 350 MHz frequency response for high-speed digital logic interfacing. Compare against single-transistor alternatives if only one channel is needed to optimize board real estate. Evaluate thermal performance relative to the 150 mW dissipation limit in enclosed environments.

Part Context

The EMT51T2R belongs to ROHM's series of dual bipolar transistor arrays designed for efficient circuit miniaturization. These devices integrate two separate transistor elements within a single lead frame, providing functional isolation between channels. This architecture simplifies layout compared to discrete components while maintaining identical electrical characteristics. The series targets consumer electronics and industrial control systems where board density and manufacturing efficiency are critical priorities.

Replacement Considerations

Public confirmed substitute part numbers: None identified.