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The EMT52T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two PNP transistors with built-in bias resistors in an SOT-563 (EMT6) surface-mount package. It operates with a collector-emitter voltage of -150 mV and a continuous collector current of -100 mA. The device includes typical input resistance of 47 kOhms and maintains a DC collector/base gain (hfe) minimum of 80 at -5 mA and -10 V. Key electrical limits include a maximum power dissipation of 150 mW, an emitter-base voltage of -3 V, and a saturation output voltage of -70 mV. It supports a maximum operating frequency of 250 MHz and functions within a temperature range up to +150 C.
Verify the specific suffix 'T2R' against official ROHM documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compatibility with standard SMD reflow profiles and check RoHS compliance status through authorized distributors. Confirm availability of the datasheet PDF for detailed thermal derating curves before finalizing procurement orders.
Select this component when a dual PNP configuration with fixed internal biasing is required to reduce external component count. Compare the 47 kOhm input resistance against circuit drive requirements to ensure adequate base current. Evaluate the -150 mV collector-emitter voltage limit against the system's supply rails to prevent breakdown during operation.
This part belongs to ROHM's digital transistor family, which combines bipolar junction transistors with internal resistors. These devices are designed to replace discrete resistor-transistor networks, offering improved reliability and reduced board space. The EMT52T2R specifically addresses applications needing dual PNP switching capabilities in a minimal footprint.
Direct substitutes may include other dual PNP digital transistors in SOT-563 packages from ROHM or competitors, provided pinouts and electrical ratings match. Verify equivalent input resistance values and hfe characteristics to maintain circuit performance without redesign.