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The EMX1DXV6T5G is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 50 V, with a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 7 V. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 357 mW. It utilizes silicon technology in an SOT-563-6 surface-mount package. Key electrical characteristics include a transition frequency (fT) of 180 MHz and a minimum DC current gain (hFE) of 120.
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Select this component when a dual NPN topology is required in a minimal footprint SOT-563 package. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the continuous current remains below 100 mA. Consider the 357 mW power dissipation limit and thermal management requirements for high-density PCB layouts where heat accumulation may impact performance.
This part belongs to the EMX1 series of dual BJT arrays from onsemi. It serves as a complement to other discrete transistors by providing two matched NPN units in one package, reducing board space and simplifying assembly compared to using individual components.
The EMX1DXV6T1G is a verified equivalent part number within the same product family, offering identical electrical specifications and pinout compatibility for direct substitution in existing designs.