EMX1DXV6T5G

EMX1DXV6T5G

$0.36
  • Description:TRANS 2NPN 50V 100MA SOT-563
  • Series:-

SKU:533cfaa93ef6 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 50V 100MA SOT-563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:500mW
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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EMX1DXV6T5G

Overview

The EMX1DXV6T5G is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 50 V, with a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 7 V. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 357 mW. It utilizes silicon technology in an SOT-563-6 surface-mount package. Key electrical characteristics include a transition frequency (fT) of 180 MHz and a minimum DC current gain (hFE) of 120.

Feature Summary

  • Dual NPN configuration integrated into a single compact SMD package for space-efficient circuit design.
  • High thermal stability supporting operation up to +150°C junction temperature.
  • Silicon-based construction ensuring reliable performance in standard switching applications.

Applications

  • General-purpose switching circuits requiring dual NPN logic inversion.
  • Low-power signal processing stages in consumer electronics.
  • Interface drivers for digital logic families operating within specified voltage limits.

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via the official datasheet, as environmental declarations may vary by production batch. Validate that the specific ordering suffix corresponds to the required packaging format, such as cut tape or reel, prior to finalizing procurement orders to ensure compatibility with assembly processes.

Selection Notes

Select this component when a dual NPN topology is required in a minimal footprint SOT-563 package. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the continuous current remains below 100 mA. Consider the 357 mW power dissipation limit and thermal management requirements for high-density PCB layouts where heat accumulation may impact performance.

Part Context

This part belongs to the EMX1 series of dual BJT arrays from onsemi. It serves as a complement to other discrete transistors by providing two matched NPN units in one package, reducing board space and simplifying assembly compared to using individual components.

Replacement Considerations

The EMX1DXV6T1G is a verified equivalent part number within the same product family, offering identical electrical specifications and pinout compatibility for direct substitution in existing designs.

EMX1DXV6T5GEMX1DXV6T5G
$0.36
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