EMX1FHAT2R

EMX1FHAT2R

$0.27
  • Description:TRANS 2NPN DUAL 50V 150MA EMT6
  • Series:-

SKU:df28f3bb99c5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 150MA EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:150mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6
  • Grade:Automotive
  • Qualification:AEC-Q101

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EMX1FHAT2R

Overview

The EMX1FHAT2R is a complex NPN+NPN general-purpose amplifier transistor manufactured by ROHM Semiconductor. It integrates two separate NPN elements within a single SOT-563 (EMT6) surface-mount package, which corresponds to the R-PDSO-F6 leaded configuration. The device supports a maximum collector current of 0.15 A and withstands a collector-emitter voltage of 50 V for both transistors. It features a minimum DC current gain (hFE) of 120. The component is RoHS compliant, operates within a humidity sensitivity level of 1, and has a peak reflow temperature rating of 260°C.

Feature Summary

  • Integrates two independent NPN bipolar junction transistors into a compact dual-element structure.
  • Designed for general-purpose amplification applications with standardized surface-mount packaging.
  • Provides high current gain characteristics suitable for signal processing tasks.

Applications

  • General-purpose amplification circuits
  • Signal processing stages in consumer electronics
  • Switching applications requiring dual NPN configurations

Procurement Notes

Verify the specific ordering suffix T2R to confirm the tape-and-reel packaging format required for automated assembly processes. Ensure compatibility with the SOT-563 footprint during PCB layout validation. Confirm that the design intent aligns with the active supply status, as this component serves as a direct replacement for legacy parts like the EMX2 in existing designs rather than being recommended for new development projects.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. The 50 V collector-emitter voltage rating defines the maximum operating limits for the circuit design. The 0.15 A continuous collector current capability determines the load handling capacity. Designers should account for the thermal dissipation characteristics inherent to the small outline plastic epoxy package under specified ambient conditions.

Part Context

This part belongs to ROHM's lineup of complex transistors designed to reduce component count and board space. It functions as a modern equivalent to older discrete dual-transistor solutions, offering improved consistency through monolithic integration. The EMT6 package standardizes the pinout for easy substitution in established hardware architectures.

Replacement Considerations

The EMX1FHAT2R is listed as a similar-level replacement for the EMX2, sharing the same EMT6 package and electrical specifications. It serves as an alternative to using two separate 2SC2412K transistors, providing a consolidated solution with identical terminal polarity and voltage ratings.

EMX1FHAT2REMX1FHAT2R
$0.27
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