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The EMX1T2R is a dual NPN bipolar junction transistor manufactured by ROHM Semiconductor. It is housed in an EMT6 (SOT-563) surface-mount package with six terminals. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. Key electrical parameters include a transition frequency of 180 MHz, a power dissipation capacity of 150 mW, and a DC current gain range from 120 to 560 at 1 mA and 6 V. The component supports a maximum operating temperature of +150°C.
Verify the specific ordering suffix to ensure correct packaging format, such as tape and reel or cut tape, as these affect handling but not electrical function. Confirm RoHS compliance status through official documentation before integration. Cross-reference the manufacturer part number with distributor databases to validate authenticity and current production status.
Select this component when a dual NPN arrangement is required in a space-constrained design. Ensure the application voltage remains below the 50 V collector-emitter limit. Consider the 150 mA current rating for load requirements. Verify thermal management needs against the 150 mW power dissipation limit in the EMT6 package.
The EMX1T2R belongs to ROHM's EMX series of complex transistors designed for surface-mount technology. It serves as a modern replacement for older discrete dual-transistor solutions, offering improved board space efficiency. The EMT6 package provides a standardized footprint compatible with automated assembly processes common in mass production environments.
Public data indicates the EMX2 is a similar level alternative with identical specifications and package dimensions. Designers should verify pinout compatibility and thermal characteristics when substituting components.