EMX26T2R

Overview

The EMX26T2R is a dual NPN bipolar junction transistor manufactured by ROHM Semiconductor. It integrates two transistors in an SOT-563 (EMT6) surface-mount package with six terminals. The device features a collector-emitter voltage of 50 V and a continuous collector current of 150 mA. Key electrical parameters include a DC current gain ranging from 820 to 2700 at 1 mA, a transition frequency of 250 MHz, and a power dissipation capacity of 150 mW. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates two NPN transistors in a compact SOT-563 package for space-constrained designs.
• Provides high DC current gain suitable for sensitive amplification applications.
• Supports operation up to 150°C junction temperature for thermal resilience.

Applications

• Differential amplifier circuits
• High-frequency crystal oscillator starters
• General-purpose signal amplification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging configuration. Confirm RoHS compliance status directly with the supplier documentation prior to procurement. Ensure the component meets the required automotive or industrial qualification standards if applicable to the end-use environment.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Compare the 50 V rating and 150 mA current limit against circuit requirements. Consider the 250 MHz transition frequency for bandwidth needs. Verify that the SOT-563 package dimensions fit the PCB layout constraints.

Part Context

This part belongs to the EMX26 series of dual bipolar transistors. It serves as a standard-level discrete semiconductor solution for general electronics. The product is distinct from digital transistors or MOSFET variants within the same manufacturer portfolio.

Replacement Considerations

The 2SD2654 is listed as an equivalent single-part alternative. Designers should verify pin compatibility and parameter alignment when substituting individual transistors for this dual unit.