EMX2DXV6T1G

EMX2DXV6T1G

  • Description:TRANS 2NPN 50V 100MA SOT-563
  • Series:-

SKU:ff580b41fd46 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN 50V 100MA SOT-563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:357mW
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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EMX2DXV6T1G

Overview

The EMX2DXV6T1G is a dual NPN general-purpose amplifier transistor manufactured by onsemi. It is housed in the SOT-563 surface-mount package designed for low power applications where board space is limited. The device features a collector-base voltage of 60 Vdc, a collector-emitter voltage of 50 Vdc, and an emitter-base voltage of 7.0 Vdc. Continuous collector current is rated at 100 mAdc. DC current gain (hFE) ranges from 120 to 560 with a typical value between 210 and 460. Transition frequency is typically 180 MHz. Total device dissipation is 357 mW at 25°C for one junction heated and 500 mW when both junctions are heated.

Feature Summary

  • Dual NPN configuration integrated into a compact SOT-563 package to reduce board space requirements.
  • High DC current gain (hFE) ranging from 120 to 560 for efficient signal amplification.
  • Low collector-emitter saturation voltage (VCE(sat)) below 0.5 V for improved efficiency.
  • Lead-free construction compliant with environmental standards.

Applications

  • General purpose amplifier circuits
  • Low power surface mount applications
  • Space-constrained electronic designs

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The 'T1G' suffix indicates a tape and reel quantity of 4000 units, while the 'T5G' variant contains 8000 units per reel. Confirm RoHS compliance status and lead-free marking details directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring dual NPN transistors in a minimal footprint. Ensure the application operates within the 50 V collector-emitter and 100 mA continuous current limits. Consider the thermal resistance of 350 °C/W for single junction heating when calculating heat dissipation in enclosed environments.

Part Context

This part belongs to the EMX2 series of dual NPN general-purpose amplifier transistors produced by onsemi. It shares the same electrical characteristics and package type as the EMX2DXV6T5G, differing only in the standard tape and reel packaging quantity provided by the manufacturer.

Replacement Considerations

Direct substitutes include the EMX2DXV6T5G, which offers identical electrical performance but is packaged in reels of 8000 units instead of 4000.

EMX2DXV6T1GEMX2DXV6T1G

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