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The EMX2DXV6T5G is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-563-6 surface-mount package. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 50 V, and a collector-base voltage (VCBO) of 60 V. The device features an emitter-base voltage (VEBO) of 7 V, a power dissipation (Pd) of 357 mW, and a gain-bandwidth product (fT) of 180 MHz. It operates within a temperature range of -55°C to +150°C.
Verify the exact part number suffix, as the provided model lacks the 'G' often associated with RoHS compliance in onsemi's naming convention. Confirm availability status, as similar EMX series components may be subject to end-of-life notices or production changes. Cross-reference with official distributor catalogs to ensure the specific variant matches your design requirements before ordering.
Select this component when a dual NPN BJT is required in a small SOT-563 package. Ensure the application voltage does not exceed 50 V between collector and emitter. Verify that the 100 mA current limit and 357 mW power dissipation are sufficient for the intended load. Consider thermal management if operating near the upper temperature limits.
This component belongs to the EMX series of dual transistors from onsemi. These devices are designed for space-constrained applications requiring multiple NPN transistors in a single package. The series typically offers matched characteristics for differential pairs or complementary logic functions.
The VT6X2 is listed as a replacement for the EMX52, which shares similar specifications. Verify pinout compatibility and electrical parameters against the VT6X2 datasheet before substitution. Other dual NPN transistors in SOT-563 packages may serve as alternatives if they meet the voltage and current requirements.