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The EMX2DXV6T5G is a dual NPN bipolar junction transistor array manufactured by onsemi. It features a SOT-563-6 surface-mount package designed for general-purpose amplifier applications. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 357 mW. It exhibits a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 180 MHz. The operational temperature range spans from -55°C to +150°C.
This component is officially classified as obsolete and no longer manufactured by onsemi. Procurement must rely exclusively on authorized distributors holding remaining new old stock or verified surplus channels. Verify authenticity through official datasheets and traceability documentation. Avoid unauthorized sources due to high counterfeit risk for legacy semiconductor parts.
Select this part only if the specific dual NPN architecture and SOT-563 footprint are mandatory for the design. Consider that the obsolete status limits long-term supply availability. Evaluate alternative active components with identical pinout and electrical specifications to ensure future production viability and supply chain security.
The EMX2DXV6T5G belongs to onsemi's discrete bipolar transistor family, specifically within the dual NPN array category. It utilizes silicon technology and is intended for standard electronic applications where space-constrained dual transistor solutions are required. The device represents a legacy offering within the manufacturer's broader portfolio of intelligent power and sensing technologies.
Public confirmed substitute part numbers are not available in the provided documentation. The CMLT5088E TR PBFREE from Central Semiconductor Corp. is listed as a similar available option but requires full electrical and mechanical verification before substitution.