EMX3T2R

Overview

The EMX3T2R is a dual NPN bipolar junction transistor manufactured by ROHM Semiconductor. It integrates two general-purpose transistors within a single SMD package, specifically the EMT6 (SOT-563) configuration. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA per element. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 560 at 1 mA and 5 V. The component operates with a power dissipation rating of 150 mW and functions reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Integrates two matched NPN transistors in a compact surface-mount footprint
• Provides high DC current gain suitable for general switching applications
• Supports wide operating temperature ranges for industrial environments

Applications

• General purpose signal switching circuits
• Low-power amplifier stages
• Digital logic interface buffers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status directly with the supplier documentation prior to integration into final assemblies.

Selection Notes

Select this component when a dual NPN configuration is required in a small outline package. Ensure the design accounts for the 150 mA current limit and 150 mW thermal dissipation constraints under expected load conditions.

Part Context

This part belongs to the EMX series of dual transistors from ROHM. It serves as a direct replacement for older discrete dual packages, offering space savings on printed circuit boards while maintaining standard general-purpose performance metrics for consumer and industrial electronics.

Replacement Considerations

The EMX2T2R is a confirmed substitute within the same family. Both parts share identical pinouts, packages, and electrical ratings, allowing for direct interchangeability in existing designs without schematic modifications.