EMX5T2R

Overview

The EMX5T2R is a dual NPN bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 11V. The device operates with a transition frequency of 3.2GHz and has a maximum power dissipation of 150mW. DC current gain (hFE) is specified at a minimum of 56 when tested at 5mA and 10V. The saturation voltage is limited to 500mV at 5mA base and 10mA collector currents. The component utilizes an EMT6 surface-mount package, equivalent to SOT-563 or SOT-666, and supports a maximum junction temperature of 150°C.

Feature Summary

• Dual NPN configuration within a compact surface-mount footprint
• High-speed operation capability indicated by 3.2GHz transition frequency
• Low saturation voltage for efficient switching performance

Applications

• General-purpose signal amplification circuits
• High-frequency switching applications
• Digital logic interface circuits

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status prior to procurement, as manufacturing updates may occur. Confirm that the EMT6 package dimensions align with the target PCB layout constraints. Ensure that the 11V voltage rating meets the circuit requirements, as higher voltage variants such as the EMX51T2R are available from the same manufacturer if the application demands increased headroom.

Selection Notes

Select this component for designs requiring dual NPN transistors in a minimal space-constrained environment. The 50mA current limit defines its suitability for low-power signal processing rather than high-current driving tasks. Consider the 11V breakdown voltage carefully; if the operating voltage exceeds this threshold, alternative parts like the EMX51T2R with 20V ratings should be evaluated instead. The 150mW power dissipation rating necessitates adequate thermal management on the PCB.

Part Context

The EMX5T2R belongs to Rohm's EMX series of complex transistors, which integrate multiple discrete semiconductor elements into single packages to reduce board space. This specific model provides two NPN transistors, distinguishing it from PNP or complementary NPN/PNP configurations within the same family. It serves as a direct replacement for legacy discrete dual-transistor implementations in consumer and industrial electronics.

Replacement Considerations

The EMX51T2R is documented as a similar alternative from Rohm Semiconductor. It offers higher voltage ratings (20V VCEO) and current capabilities (200mA Ic) compared to the EMX5T2R. Designers must verify that the increased electrical specifications do not conflict with existing circuit protection limits.