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The EMZ1DXV6T1G is a dual bipolar junction transistor (BJT) array manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates one NPN and one PNP transistor within a single compact footprint. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 60V. It features transition frequencies of 180MHz for the NPN element and 140MHz for the PNP element. Power dissipation is rated at 500mW, with a junction temperature range spanning from -55°C to 150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Check for obsolescence notices or product change notifications prior to procurement. Ensure storage conditions align with moisture sensitivity level requirements.
Select this component when space-constrained designs require matched NPN/PNP pairs. Consider the 60V rating and 100mA current limit for circuit constraints. Evaluate thermal management needs given the 500mW power dissipation capability in the SOT-563 package.
This part belongs to the EMZ1 series of dual BJT arrays from onsemi. It serves as a compact solution for applications needing both NPN and PNP functionality without occupying separate board real estate. The SOT-563 package facilitates automated assembly in high-volume manufacturing environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pin compatibility and electrical specifications before considering alternative manufacturers.