EMZ1DXV6T5G

Overview

The EMZ1DXV6T5G is a dual bipolar junction transistor (BJT) array manufactured by onsemi, featuring one NPN and one PNP transistor within a single SOT-563 surface-mount package. The device supports a maximum collector current of 100 mA and operates with a collector-emitter voltage rating of 60 V. It exhibits a transition frequency of 180 MHz for the NPN section and 140 MHz for the PNP section. Power dissipation reaches 500 mW, while the DC current gain is specified at a minimum of 120 under standard test conditions. The component functions reliably across an extended temperature range from -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact SOT-563 footprint for space-constrained designs.
• Provides high-speed switching capabilities with transition frequencies up to 180 MHz.
• Supports wide operating temperature ranges suitable for demanding industrial environments.

Applications

• General-purpose switching circuits requiring complementary logic levels.
• Signal conditioning stages in portable electronic devices.
• Interface drivers in high-density printed circuit board layouts.

Procurement Notes

Verify the specific suffix configuration against official datasheets before procurement, as variations may exist within the product family. Confirm availability status directly with authorized distributors, as this component may be subject to end-of-life notices or production changes. Ensure that the ordering part number matches the required electrical specifications and packaging format for your assembly process.

Selection Notes

Select this component when a matched pair of NPN and PNP transistors is required in a minimal footprint. The SOT-563 package offers thermal and mechanical advantages over discrete equivalents. Consider the 100 mA current limit and 60 V voltage ratings to ensure operation within safe boundaries. Evaluate the 500 mW power dissipation capability relative to your thermal management strategy.

Part Context

This device belongs to the EMZ1 series of dual BJT arrays produced by onsemi. The series is designed to replace multiple discrete transistors, reducing board space and assembly complexity. The EMZ1DXV6T5G specifically combines NPN and PNP structures optimized for general analog and digital switching applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs through rigorous electrical testing if considering alternative manufacturers or pin-compatible devices.