EMZ52T2R

EMZ52T2R

$0.29
  • Description:TRANS NPN/PNP 50V 100MA EMT6
  • Series:-

SKU:0b0fa69b585d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 100MA EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:150mW
  • Frequency - Transition:350MHz, 300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6
  • Grade:-
  • Qualification:-

Download product information

EMZ52T2R

Overview

The EMZ52T2R is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It features an NPN and PNP configuration housed in a compact SOT-563 (EMT6) surface-mount package. The device supports a maximum collector current of 100 mA for the NPN section and 500 mA for the PNP section, with corresponding collector-emitter voltages of 50 V and 12 V respectively. Key electrical characteristics include transition frequencies of 250 MHz and 260 MHz, and a power dissipation rating of 150 mW.

Feature Summary

  • Integrates one NPN and one PNP transistor within a single six-terminal surface-mount package to reduce component count.
  • Provides high-speed switching capabilities suitable for applications requiring transition frequencies up to 260 MHz.
  • Designed for low-power operation with a total power dissipation limit of 150 mW.

Applications

  • General-purpose signal switching circuits
  • Logic interface and level shifting stages
  • Driver circuits for small-signal loads

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity requirements directly with the manufacturer or authorized distributors before placing orders. Confirm RoHS compliance status and lead times for the requested volume. Ensure that the EMT6 package dimensions match the target PCB footprint constraints during the procurement phase.

Selection Notes

Select this component when a mixed NPN/PNP pair is required in a minimal footprint. Compare the 50 V NPN and 12 V PNP voltage ratings against circuit requirements. Evaluate the 150 mW thermal limit against expected load currents to ensure adequate heat dissipation without additional cooling measures.

Part Context

This part belongs to ROHM's complex transistor family, specifically designed as a dual BJT solution. It serves as a space-saving alternative to discrete transistors, consolidating two distinct polarities into one standardized SOT-563 housing. This integration simplifies assembly processes while maintaining standard bipolar performance metrics.

Replacement Considerations

The VT6Z1 is documented as a similar specification replacement option. Verify pin compatibility and exact voltage/current margins before substitution. Other family members like the EMX51T2R offer different polarity configurations and should be evaluated based on specific circuit needs.

EMZ52T2REMZ52T2R
$0.29
Buy Now