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The EMZ52T2R is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It features an NPN and PNP configuration housed in a compact SOT-563 (EMT6) surface-mount package. The device supports a maximum collector current of 100 mA for the NPN section and 500 mA for the PNP section, with corresponding collector-emitter voltages of 50 V and 12 V respectively. Key electrical characteristics include transition frequencies of 250 MHz and 260 MHz, and a power dissipation rating of 150 mW.
Verify the specific ordering suffix and tape-and-reel quantity requirements directly with the manufacturer or authorized distributors before placing orders. Confirm RoHS compliance status and lead times for the requested volume. Ensure that the EMT6 package dimensions match the target PCB footprint constraints during the procurement phase.
Select this component when a mixed NPN/PNP pair is required in a minimal footprint. Compare the 50 V NPN and 12 V PNP voltage ratings against circuit requirements. Evaluate the 150 mW thermal limit against expected load currents to ensure adequate heat dissipation without additional cooling measures.
This part belongs to ROHM's complex transistor family, specifically designed as a dual BJT solution. It serves as a space-saving alternative to discrete transistors, consolidating two distinct polarities into one standardized SOT-563 housing. This integration simplifies assembly processes while maintaining standard bipolar performance metrics.
The VT6Z1 is documented as a similar specification replacement option. Verify pin compatibility and exact voltage/current margins before substitution. Other family members like the EMX51T2R offer different polarity configurations and should be evaluated based on specific circuit needs.