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Product Detailed Parameters
- Description：GANFET N-CH 200V 22A DIE OUTLINE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：25mOhm @ 12A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：5.3 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2010C is a normally-off enhancement-mode GaN FET from the EPC2000 series, utilizing eGaN technology. It features a 100 V drain-source voltage and a typical on-resistance of 13 mΩ at room temperature. The device is housed in a compact 4 mm x 5 mm DFN-8L package with exposed thermal pad. Key electrical characteristics include a gate threshold voltage range of 1.0 V to 2.5 V and a maximum continuous drain current of 67 A. It supports high-speed switching with low gate charge.
Feature Summary
- Normally-off operation ensures inherent safety and simplifies driver requirements without external biasing.
- Enhanced GaN transistor technology provides superior electron mobility for reduced conduction losses.
- Low output capacitance enables efficient high-frequency power conversion with minimal switching energy loss.
Applications
- High-efficiency synchronous buck converters
- Point-of-load (POL) regulation modules
- Class-D audio amplifiers
Procurement Notes
Verify the specific suffix code on the component marking against the manufacturer's official datasheet to confirm pinout compatibility and thermal pad configuration. Ensure that the ordering information matches the exact voltage rating and package type required for the design. Cross-reference the lot date code to verify manufacturing recency and storage conditions.
Selection Notes
Select this component when designing circuits requiring high power density and fast transient response. The low on-resistance minimizes conduction losses in high-current applications. Consider the thermal resistance of the DFN-8L package and ensure adequate PCB copper area for heat dissipation to maintain reliability under continuous load conditions.
Part Context
This part belongs to the EPC2000 series of enhancement-mode gallium nitride field-effect transistors. These devices are designed to replace traditional silicon MOSFETs in applications demanding higher efficiency and smaller form factors. The series integrates the benefits of wide-bandgap semiconductor physics into standard surface-mount packages.
Replacement Considerations
Direct replacements within the same family include the EPC2016C (100V, lower Rds(on)) or EPC2036C (60V). Verify that any substitute maintains the same DFN-8L footprint and thermal performance specifications to avoid redesigning the PCB layout.
