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Product Detailed Parameters
- Description：GANFET N-CH 40V 10A DIE OUTLINE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Replacement Considerations
The EPC2014C is a bumped die component. Direct pin-compatible replacements are not documented in public sources. Designers must evaluate alternative eGaN FETs based on voltage, current, and thermal requirements rather than assuming interchangeability.
