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Product Detailed Parameters
- Description：GANFET N-CH 40V 53A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：53A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：4mOhm @ 33A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1180 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2015C is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications. It features a low on-state resistance and fast switching characteristics, enabling reduced conduction and switching losses in hard-switching topologies. The device is housed in a compact package optimized for thermal performance and electrical reliability.
Feature Summary
- Utilizes silicon carbide technology for superior thermal conductivity and breakdown voltage.
- Optimized gate charge profile to facilitate high-frequency operation with minimal drive loss.
- Robust avalanche energy rating ensures reliable performance under transient overload conditions.
Applications
- High-efficiency DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix code against the manufacturer's official datasheet to confirm pinout compatibility and thermal pad specifications. Ensure the ordering part number matches the required package variant and temperature grade. Cross-reference the lot date code to confirm compliance with current RoHS directives and material declarations prior to procurement.
Selection Notes
Evaluate the device's maximum drain-source voltage and continuous drain current ratings against the application's peak load requirements. Consider the thermal resistance parameters to determine appropriate heatsinking or PCB copper area needs. Assess the gate threshold voltage compatibility with available driver ICs to ensure proper turn-on and turn-off timing margins.
Part Context
This component belongs to the EPC series of enhancement-mode silicon carbide power transistors. These devices are engineered to replace traditional silicon MOSFETs and IGBTs in demanding power electronics environments, offering higher efficiency and power density through advanced semiconductor materials and packaging technologies.
Replacement Considerations
Direct replacements must match the pinout, voltage rating, and thermal characteristics. Verify that any substitute SiC MOSFET maintains compatible gate drive requirements and package dimensions to ensure mechanical fit without redesigning the PCB layout or driver circuitry.
