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Product Detailed Parameters
- Description：GANFET N-CH 200V 8.5A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：42mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：288 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2019 is a 200 V rated enhancement mode gallium nitride field-effect transistor (eGaN FET) from Efficient Power Conversion. It features a low on-resistance of 35 mΩ and a gate charge of 4 nC, enabling high-speed switching with minimal losses. The device utilizes a D²PAK-7 package for robust thermal performance and reliable operation in power electronics applications.
Feature Summary
- Enhancement-mode normally-off operation ensures safe startup and prevents unintended conduction.
- Low intrinsic capacitances support high-frequency switching with reduced dynamic losses.
- Integrated body diode provides inherent reverse conduction capability.
Applications
- Class-E RF power amplifiers
- Half-bridge and H-bridge power converters
- High-voltage narrow pulse width applications such as LiDAR
Procurement Notes
Verify the specific suffix code to confirm the exact pinout and thermal pad configuration. Confirm RoHS compliance status for the specific manufacturing lot. Ensure the ordering part number matches the required package variant. Check for any recent product change notices regarding substrate or lead material updates.
Selection Notes
Select based on the 200 V drain-source voltage rating and 35 mΩ on-resistance requirements. Consider the D²PAK-7 package for adequate heat dissipation in high-current scenarios. Evaluate gate drive compatibility with the 4 nC gate charge specification. Verify that the application frequency aligns with the device's switching capabilities.
Part Context
The EPC2019 is an earlier generation eGaN FET designed for high-efficiency power conversion. It serves as the core switching element in development boards like the EPC9014 and EPC9053. While fully supported, newer devices such as the EPC2054 are recommended for new designs due to improved performance metrics.
Replacement Considerations
The GaN Experts recommend the EPC2054 for new designs. The EPC2054 offers better price and performance characteristics compared to the EPC2019 while maintaining similar form factors.
