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Product Detailed Parameters
- Description：GANFET N-CH 80V 90A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 29A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2021 is an enhancement mode gallium nitride (GaN) power transistor designed for high-efficiency power conversion. It features a drain-source voltage rating of 80 V and a maximum pulsed drain current of 390 A, with a continuous drain current of 90 A at ambient temperature. The device exhibits a low on-resistance of 2.2 mΩ, contributing to reduced conduction losses. Operating within a junction temperature range of -40°C to 150°C, it is supplied as a passivated die with solder bumps in a surface-mount configuration.
Feature Summary
- Enhancement mode operation utilizing gallium nitride technology
- Zero reverse recovery charge for improved switching efficiency
- Passivated chip construction with integrated solder bumps
Applications
- High-frequency DC-DC converters
- Motor drive systems
- Industrial automation power supplies
- Synchronous rectification circuits
Procurement Notes
Verify the specific revision level and lot traceability upon order confirmation. Confirm that the receiving facility has appropriate electrostatic discharge protection protocols, as the component is supplied as a bare die. Ensure compatibility with the intended substrate or carrier board for proper thermal management and electrical connection via the solder bump interconnects.
Selection Notes
Select this component when designing circuits requiring high power density and minimal switching losses. The 80 V rating suits applications operating below this threshold with adequate safety margins. Consider the thermal resistance characteristics of the mounting solution, as heat dissipation relies on direct attachment to a heat sink or PCB copper plane due to the die package format.
Part Context
This part belongs to the EPC enhancement mode GaN FET family, which replaces traditional silicon MOSFETs in many power stages. Unlike packaged transistors, this specific model is provided as a bare die, requiring integration into custom assemblies or specialized carriers. It shares architectural similarities with other EPC GaN devices but is distinct in its specific voltage and current ratings.
Replacement Considerations
No direct pin-compatible replacements are documented for this bare die configuration. Designers must evaluate alternative GaN dies from the same manufacturer or other vendors based on matching VDS, RDS(on), and package footprint requirements.
