EPC2021ENGR

$4.71

Description：TRANS GAN 80V 60A BUMPED DIE
Series：eGaN®
Mfr：EPC
Package：Cut Tape (CT)

SKU:1cd2deb9ec41 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 80V 60A BUMPED DIE
Series：eGaN®
Mfr：EPC
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id：2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2021ENGR

Overview

The EPC2021ENGR is an enhancement mode power transistor utilizing Gallium Nitride (GaN) technology on a silicon substrate. It features an N-channel configuration with a drain-to-source voltage rating of 80 V and a continuous drain current capacity of 60 A at 25°C. The device exhibits a maximum on-resistance of 2.2 mΩ at 5 V gate drive, supporting high-efficiency switching. Packaged as a bumped die, it is designed for compact integration in power conversion systems requiring low thermal resistance and high current density.

Feature Summary

Enhancement mode operation using eGaN FET technology
Low on-resistance for efficient power handling
Bumped die package for direct mounting

Applications

DC-DC converters
Motor drivers
Power supplies

Procurement Notes

Verify the specific suffix ENGR to confirm the bumped die package variant. Ensure compatibility with the intended PCB footprint for die attachment. Confirm thermal management requirements align with the component's dissipation ratings. Validate that the 80V rating meets system voltage headroom needs. Check for any specific handling instructions associated with bare die components.

Selection Notes

Select this component for applications demanding high current density and low conduction losses. The 80V rating suits intermediate voltage bus architectures. Consider the bumped die form factor for space-constrained designs where traditional packages are unsuitable. Evaluate thermal performance against the 2.2 mΩ on-resistance specification for efficiency targets.

Part Context

EPC specializes in enhancement mode GaN transistors on silicon. The EPC2021 series represents their power transistor lineup, offering superior performance compared to silicon MOSFETs. This specific model integrates high breakdown voltage with low on-state resistance, targeting modern power electronics.