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Product Detailed Parameters
- Description：GANFET N-CH 300V 4A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：194 pF @ 240 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Download product information
Overview
The EPC2025 is an eGaN® field-effect transistor (FET) manufactured by Efficient Power Conversion (EPC). It utilizes gallium nitride (GaN) technology to achieve low on-resistance and high electron mobility. The device is configured as a normally-off, N-channel power switch rated for 300V and 4A. It is designed for high-frequency DC-DC conversion applications.
Feature Summary
- Utilizes eGaN® technology for enhanced performance
- Features low on-resistance characteristics
- Provides high electron mobility
- Designed for high-frequency operation
Applications
- High-frequency DC-DC conversion
- Medical equipment power supplies
Procurement Notes
Verify the specific datasheet version and material composition declaration before procurement. Confirm that the component matches the required electrical specifications for your design. Check for any obsolescence notices or lifecycle status updates from the manufacturer. Ensure compatibility with your intended application environment.
Selection Notes
Select this component for designs requiring high-frequency switching capabilities. Consider its GaN technology benefits for efficiency improvements. Evaluate the 300V rating against system voltage requirements. Assess the thermal management needs associated with its power handling capabilities in your specific circuit topology.
Part Context
This part belongs to the eGaN® FET family from EPC. These devices leverage advanced semiconductor materials to outperform traditional silicon MOSFETs in terms of speed and efficiency. The product line targets modern power electronics demanding compact size and high performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official EPC resources for potential cross-references or newer generation equivalents if this specific model is obsolete.
