EPC2029

$8.41

Description：GANFET N-CH 80V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f3b1c45d0727 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 80V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id：2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1410 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2029

Overview

The EPC2029 is an enhancement mode Gallium Nitride (eGaN) field-effect transistor rated for 80 V and 31 A. It belongs to the 'Relaxed Pitch' series, featuring a 1 mm ball pitch within a compact 4.6 mm x 2.6 mm footprint. This design accommodates larger vias beneath the device to support high current carrying capabilities. Compared to silicon MOSFETs with similar on-resistance, it offers significantly smaller size and superior switching performance.

Feature Summary

Utilizes eGaN technology for enhanced switching efficiency
Features a relaxed 1 mm ball pitch for improved thermal and electrical connectivity
Optimized for high-frequency operation with minimal footprint

Applications

High frequency DC-DC converters
Synchronous rectification in AC/DC and DC/DC converters
Motor drives
Class-D audio amplifiers

Procurement Notes

Verify the specific package type and pinout configuration against the official datasheet before integration. Ensure that the PCB layout supports the 1 mm ball pitch requirement to maintain optimal electrical performance. Confirm that the application environment stays within the 80 V rating limits. Cross-reference the manufacturer's latest documentation for any updates to the recommended operating conditions or thermal management guidelines.

Selection Notes

Select this component when space constraints are critical but high current handling is required. The relaxed pitch design facilitates easier placement of vias compared to standard fine-pitch packages. It is suitable for designs demanding faster switching speeds than traditional silicon devices while maintaining low conduction losses. Evaluate the need for synchronous rectification benefits in the target power supply topology.

Part Context

The EPC2029 is part of EPC's portfolio of wide pitch eGaN FETs, designed to bridge the gap between high performance and manufacturability. It serves as a direct upgrade path for applications previously limited by silicon MOSFET size and speed constraints. The device is often evaluated using dedicated development boards like the EPC9046 to assess performance in half-bridge topologies.