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Product Detailed Parameters
- Description：GANFET N-CH 100V 1.7A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：550mOhm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs：0.12 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：14 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2037 is an enhancement mode gallium nitride field-effect transistor (GaN FET) from the eGaN series, manufactured by Efficient Power Conversion. It features a surface-mount package and operates as an N-channel device with a drain-source voltage rating of 100 V. The component supports a continuous drain current of 1.7 A at ambient temperature and maintains a maximum gate-source voltage range of +6 V to -4 V. Key electrical characteristics include a threshold voltage of 2.5 V at 80 µA, an input capacitance of 14 pF at 50 V, and a gate charge of 0.12 nC at 5 V. The on-resistance is specified at 550 mΩ under 100 mA and 5 V conditions. It functions within a junction temperature range of -40°C to 150°C.
Feature Summary
- Utilizes lateral GaN structure for low gate charge and zero reverse recovery charge.
- Features an integrated body diode with low forward voltage drop.
- Designed for high switching frequency applications due to fast transient response.
Applications
- High-frequency DC-DC converters
- Synchronous rectification circuits
- Class-D audio amplifiers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and thermal pad specifications. Ensure the selected variant matches the required package type and compliance standards such as RoHS3. Cross-reference part numbers with authorized distributors to avoid counterfeit components and confirm availability status prior to procurement.
Selection Notes
Select this component for designs requiring low gate drive power and high efficiency at elevated frequencies. Evaluate the thermal performance based on the specific PCB layout and ambient temperature conditions. Consider the low input capacitance for reduced driver requirements compared to silicon MOSFETs in similar voltage classes.
Part Context
The EPC2037 belongs to the eGaN FET family, which leverages Gallium Nitride technology grown on silicon wafers. This platform utilizes standard CMOS equipment infrastructure, enabling high electron mobility and low temperature coefficients. The devices are designed to replace traditional silicon MOSFETs in applications demanding superior switching performance and reduced conduction losses.
Replacement Considerations
Direct replacements must match the 100 V rating, N-channel configuration, and surface-mount package dimensions. Verify that substitute components offer comparable gate charge and on-resistance values to maintain circuit efficiency and switching speed without redesigning the gate drive network.
