EPC2038

$1.67

Description：GANFET N-CH 100V 500MA DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fbfd0cc11b48 Category: Single FETs, MOSFETs Brand: EPC

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 500MA DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：0.044 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：8.4 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Download product information

EPC2038

Overview

The EPC2038 is an enhancement mode gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a 100 V drain-to-source breakdown voltage and a maximum continuous drain current of 0.5 A. The device incorporates an integrated reverse gate clamp diode to protect the gate oxide from overvoltage conditions. Its uncased die package measures 0.90 mm by 0.90 mm with four terminals, designed for surface-mount integration into high-frequency power conversion circuits.

Feature Summary

Integration of a reverse gate clamp diode to prevent gate oxide damage during negative voltage transients
Utilization of lateral GaN technology on silicon substrates to achieve low gate charge and zero reverse recovery charge
Enhancement mode operation compatible with standard CMOS processing infrastructure

Applications

Synchronous bootstrap supply implementation in half-bridge gate driver circuits
Evaluation of high-side device losses induced by internal bootstrap diode reverse recovery
Zero Voltage Switching Class-D amplifier configurations operating at 6.78 MHz

Procurement Notes

Verify that the specific orderable part number matches the required eGaN FET variant. Confirm compliance with RoHS and halogen-free standards as specified in the manufacturer documentation. Ensure handling procedures account for the uncased die form factor during assembly.

Selection Notes

Select this component when designing circuits requiring protection against negative gate-source voltages without external clamping components. The integrated diode simplifies layout for bootstrap supplies in half-bridge topologies. Evaluate thermal management requirements based on the small die size and application-specific power dissipation.

Part Context

This device belongs to the EPC eGaN FET family, which leverages Gallium Nitride grown on silicon wafers. The series utilizes standard CMOS equipment, combining high electron mobility with low temperature coefficients to enable efficient power switching in compact footprints.