ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：GANFET NCH 15V 3.4A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：15 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：30mOhm @ 1.5A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.93 nC @ 5 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：105 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Download product information
Overview
The EPC2040 is a gallium nitride field-effect transistor (GaNFET) manufactured by Efficient Power Conversion (EPC). It is an enhancement-mode, normally-off, N-channel device packaged as a bare die. The component features a drain-source voltage rating of 15 V and a continuous drain current of 3.4 A at 25°C ambient temperature. Key electrical characteristics include a maximum on-resistance of 30 milliohms at 1.5 A and 5 V gate drive, a threshold voltage of 2.5 V maximum at 1 mA, a gate charge of 0.93 nC maximum at 5 V, and an input capacitance of 105 pF maximum at 6 V. The device operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Utilizes eGaN technology for enhanced power density and switching performance compared to traditional silicon MOSFETs.
- Features a low gate charge characteristic that facilitates high-speed switching with minimal drive requirements.
- Designed as a surface-mount bare die for integration into custom printed circuit boards.
Applications
- High-frequency DC-DC converters
- Point-of-load regulation modules
- Power factor correction circuits
Procurement Notes
Verify the specific package variant and manufacturing lot date code upon receipt, as the component is supplied as a bare die requiring specialized handling. Confirm that the ordering suffix matches the required reel or cut tape configuration. Ensure that static-sensitive protocols are strictly followed during storage and assembly to prevent electrostatic discharge damage to the GaN structure.
Selection Notes
Select this component when a low-voltage, high-current solution is required in a compact form factor. The 15 V rating suits low-voltage bus architectures. Evaluate thermal management strategies carefully, as the bare die package relies entirely on the PCB substrate for heat dissipation. Ensure the gate driver can support the fast switching speeds inherent to GaN technology to minimize transition losses.
Part Context
The EPC2040 belongs to the EPC20 series of eGaN FETs from Efficient Power Conversion. This series focuses on leveraging gallium nitride material properties to achieve superior efficiency and power density. The device represents a shift towards monolithic integration of power switching elements directly onto system substrates.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the pinout, voltage ratings, and thermal characteristics of the original design.
