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Product Detailed Parameters
- Description：GANFET N-CH 100V 1.7A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：258 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2051 is a 100 V enhancement mode eGaN power transistor manufactured by Efficient Power Conversion. It features a low on-resistance of 135 mOhm at 5 V gate drive and supports high current capabilities up to 37 A. The device utilizes a passivated die with copper pillars in a compact BGA package measuring 1.3 mm x 0.85 mm. Designed for high-frequency operation, it achieves 97% efficiency at 500 kHz in DC/DC conversion applications. Its small footprint and low inductance make it suitable for space-constrained designs requiring high power density.
Feature Summary
- Enhancement mode GaN technology enabling high switching frequencies
- Compact BGA surface mount package with low inductance
- High efficiency performance in DC/DC conversion applications
Applications
- Isolated DC/DC converters
- BLDC motor drivers
- Class D audio amplifiers
- Lidar systems
- Open rack server architectures
Procurement Notes
Verify the specific ordering suffix to confirm the exact package configuration and reel specifications before procurement. Ensure compatibility with the intended gate drive voltage levels, as the device requires a 5 V drive for optimal performance. Confirm that the supply chain source provides genuine components from Efficient Power Conversion or authorized distributors to guarantee reliability and adherence to the specified electrical characteristics.
Selection Notes
Select the EPC2051 when design requirements demand high switching frequencies and minimal thermal footprint. Its low on-resistance and fast switching speeds reduce conduction and switching losses compared to silicon alternatives. Consider this component for applications where board space is limited but high power density is critical. Evaluate the system's ability to handle the high dv/dt associated with GaN devices to ensure stable operation.
Part Context
The EPC2051 belongs to the eGaN FET family from Efficient Power Conversion, which leverages gallium nitride semiconductor technology. This family is characterized by superior electron mobility and breakdown voltage capabilities compared to traditional silicon MOSFETs. The EPC2051 specifically targets high-efficiency power conversion needs in modern electronics, offering a balance of performance and size reduction for next-generation power supplies.
Replacement Considerations
No direct public substitute part numbers are confirmed for the EPC2051. Designers should evaluate other eGaN FETs from the same manufacturer based on voltage ratings and package compatibility if substitution is necessary.
