EPC2059

$3.76

Description：TRANS GAN 170V DIE .009OHM
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bff5ada54f06 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 170V DIE .009OHM
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：170 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：836 pF @ 85 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2059

Overview

The EPC2059 is an enhancement mode Gallium Nitride Field-Effect Transistor (eGaN FET) designed for high-efficiency power conversion applications. It features a breakdown voltage of 170 V and a typical on-resistance of 6.8 mΩ. The device supports a pulsed drain current of 102 A within a compact footprint measuring 3.9 mm². This component is engineered to provide a reliable, low-cost solution for synchronous rectification in 48 V systems.

Feature Summary

Utilizes enhancement mode eGaN technology for superior switching performance
Optimized for high efficiency in synchronous rectification topologies
Compact die size reduces parasitic inductance and capacitance

Applications

48 V DC/DC converters
Server power supplies
Class-D audio amplifiers
Motor drives

Procurement Notes

Verify the specific manufacturing lot date code and authenticity through authorized distributors or direct manufacturer channels. Ensure the procurement source provides valid traceability documentation. Confirm that the component matches the exact EPC2059 specification sheet regarding electrical parameters before integration into production designs.

Selection Notes

Select this component when designing 48 V synchronous rectification circuits requiring minimal footprint and high current handling. The 170 V rating provides adequate headroom for standard bus voltages. Consider thermal management requirements given the 102 A pulsed current capability and the small 3.9 mm² package size during layout planning.

Part Context

This device belongs to the EPC eGaN FET family, which focuses on replacing traditional silicon MOSFETs with faster, more efficient wide-bandgap alternatives. The EPC2059 specifically targets applications where space constraints and power density are critical design drivers, offering a balance between performance and cost-effectiveness.