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Product Detailed Parameters
- Description：GAN FET 80V .0036OHM 8BUMP DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs：12.2 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1449 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2065 is a gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It is an enhancement-mode device designed for high-frequency power switching applications. The component features a low on-resistance and fast switching speeds, which contribute to improved system efficiency in power converters. It is housed in a surface-mount package suitable for automated assembly processes.
Feature Summary
- Enhancement-mode operation for simplified gate drive requirements
- Low specific on-resistance for reduced conduction losses
- Fast switching characteristics enabling higher frequency operation
Applications
- High-efficiency DC-DC converters
- Class-D audio amplifiers
- Wireless power transfer systems
Procurement Notes
Verify the specific suffix codes on the ordering information to ensure the correct package type and tape-and-reel quantity match your manufacturing requirements. Confirm that the requested revision level aligns with your design specifications before finalizing procurement orders.
Selection Notes
Select this component when designing circuits that require high-speed switching with minimal thermal management overhead. Ensure the gate drive voltage limits are respected to prevent device degradation. Evaluate the thermal resistance parameters against your PCB copper area capabilities to maintain safe operating junction temperatures.
Part Context
EPC2065 belongs to the eGaN FET family from Efficient Power Conversion. These devices utilize Gallium Nitride technology to outperform traditional silicon MOSFETs in terms of speed and efficiency. The product line targets modern power electronics demanding compact form factors and high power density.
Replacement Considerations
Direct replacements must be verified against pinout compatibility and electrical ratings. Consult the manufacturer's substitution guide for equivalent devices within the same series or alternative packages offering similar performance metrics.
