EPC2071

Overview

The EPC2071 is a Gallium Nitride Field-Effect Transistor (GaN FET) manufactured by Efficient Power Conversion. It features a 100 V breakdown voltage and a typical on-resistance of 2.2 mΩ. The device supports a pulsed current capacity of 350 A. Its die footprint measures 10.2 mm², contributing to high power density in compact designs. Key electrical characteristics include low gate charge and zero reverse recovery losses, enabling efficient operation at frequencies up to 1 MHz or higher.

Feature Summary

• Zero reverse recovery losses enable high-frequency switching with minimal energy dissipation during transitions.
• Ultra-low on-resistance combined with a small die area maximizes power density for space-constrained applications.
• Reduced gate charge facilitates faster switching speeds and lowers drive power requirements compared to silicon alternatives.

Applications

• 48 V to 54 V input DC/DC converters for server and AI infrastructure
• Brushless DC (BLDC) motor drives for robotics and drones
• Electric vehicle components including e-bikes and electric scooters
• High-efficiency motor inverters for power tools

Procurement Notes

Verify the specific datasheet revision and package variant when sourcing, as manufacturing updates may occur. Confirm that the supplier provides official documentation from Efficient Power Conversion or authorized distributors. Ensure compliance with RoHS standards if required for your assembly process. Check for moisture sensitivity labeling prior to soldering to prevent damage during reflow.

Selection Notes

Select this component when high power density and efficiency are critical constraints. The EPC2071 is suitable for designs requiring fast switching speeds above 1 MHz. Consider its 100 V rating for systems operating within this voltage range. Evaluate thermal management needs based on the 10.2 mm² die size and expected load currents.

Part Context

This GaN FET belongs to the family of high-performance power semiconductors designed to replace traditional silicon MOSFETs. It offers significantly smaller physical dimensions and lower gate charge for equivalent resistance values. The technology targets applications where size, weight, and efficiency are primary design drivers.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official manufacturer resources for cross-reference information or compatible alternatives within the same product line.