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Product Detailed Parameters
- Description：TRANS GAN 100V .0032OHM BMP DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：-
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs：17.8 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：2703 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2088 is a surface-mount N-channel eGaN FET with a 100V drain-source voltage rating. It features a maximum on-resistance of 3.2 milliohms at 25A and 5V gate drive. The device supports a continuous drain current of 60A at ambient temperature, with a gate threshold voltage maximum of 2.5V at 7mA. Gate charge is specified at 17.8 nC at 5V, while input capacitance reaches 2703 pF at 50V. Operating junction temperature ranges from -40°C to 150°C, and the maximum gate-source voltage is +6V/-4V.
Feature Summary
- Utilizes eGaN technology for high-efficiency power switching
- Designed for surface mount installation in compact form factors
- Capable of handling high continuous drain currents
Applications
- High-frequency power conversion systems
- Point-of-load DC-DC converters
- Motor drive applications requiring fast switching
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number EPC2088 with official documentation. Confirm RoHS3 compliance and MSL level 1 status during intake inspection. Ensure storage conditions align with moisture sensitivity requirements to prevent package damage prior to soldering.
Selection Notes
Select this component when designing circuits requiring low conduction losses and high thermal stability. The 100V rating suits intermediate voltage buses. Verify that the driving circuit can provide the necessary 5V gate drive to achieve the specified low on-resistance performance characteristics.
Part Context
This device belongs to the eGaN family of enhancement-mode gallium nitride transistors manufactured by EPC. These components are engineered to replace traditional silicon MOSFETs in applications demanding superior efficiency and reduced footprint. The bare die format allows for flexible integration into custom power modules.
Replacement Considerations
Consult the official EPC datasheet for direct pin-compatible alternatives within the same voltage class. Verify that any substitute maintains identical gate charge and on-resistance specifications to ensure circuit performance consistency.
