EPC2101

FET, MOSFET Arrays Overview

The EPC2101 is an enhancement-mode Gallium Nitride (GaN) power transistor configured as a half-bridge. It integrates two N-channel devices, Q1 and Q2, on a single die with dimensions of 6.05 x 2.3 mm. The component features a continuous drain-to-source voltage (VDS) rating of 60 V for both transistors. Q1 has a maximum on-resistance (RDS(on)) of 11.5 mΩ at VGS = 5 V and ID = 20 A, with a continuous current rating of 10 A. Q2 exhibits a lower RDS(on) of 2.8 mΩ under identical conditions and supports a continuous current of 40 A. Both transistors operate within a junction temperature range of -40°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Integration of two distinct GaN FETs in a half-bridge configuration to reduce footprint and parasitic inductance.
• Lateral device structure providing zero reverse recovery charge (QRR) for efficient switching.
• Passivated die form factor with solder bumps designed for high-density surface mount assembly.

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Point-of-Load (POL) converters

FET, MOSFET Arrays Procurement Notes

Verify the specific lot date code and manufacturing origin upon receipt, as the datasheet indicates components are supplied in passivated die form. Ensure handling procedures account for the moisture sensitivity level classification and recommended stencil drawing specifications during assembly to maintain device integrity.

FET, MOSFET Arrays Selection Notes

Select this component when designing compact power stages requiring asymmetric current capabilities within a single package. The integrated half-bridge topology minimizes interconnect length between high-side and low-side switches, which is critical for maintaining signal integrity and minimizing switching losses in high-frequency applications.

FET, MOSFET Arrays Part Context

The EPC2101 belongs to the eGaN® family of enhancement-mode power transistors manufactured by Efficient Power Conversion Corporation. These devices utilize Gallium Nitride grown on silicon wafers, leveraging standard CMOS processing infrastructure to achieve high electron mobility and low thermal resistance compared to traditional silicon MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. Designers should evaluate alternative half-bridge GaN packages based on matching VDS ratings, total gate charge requirements, and compatible land pattern dimensions to ensure mechanical and electrical interchangeability.

FET, MOSFET Arrays FAQ

What is the recommended gate drive voltage range for the EPC2101?

The datasheet specifies a Gate-to-Source Voltage (VGS) range of -4 V to +6 V. EPC recommends using 0 V for the OFF state and typically 5 V for the ON state to optimize performance.

How does the EPC2101 handle reverse recovery charge?

Due to its lateral device structure and majority carrier diode characteristics, the EPC2101 provides zero reverse recovery charge (QRR), eliminating associated switching losses during body diode conduction.

What are the physical dimensions of the EPC2101 die?

The die size is specified as 6.05 mm by 2.3 mm. The component is supplied as a passivated die with solder bumps for direct mounting onto printed circuit boards.