EPC2101ENGRT

FET, MOSFET Arrays Overview

The EPC2101ENGRT is a passivated die form eGaN® FET half-bridge containing two enhancement-mode transistors, Q1 and Q2. It features a 60 V drain-to-source voltage rating and operates within a junction temperature range of -40°C to 150°C. The device utilizes a lateral structure with solder bumps for surface mount assembly. Key electrical parameters include an on-resistance (RDS(on)) of 11.5 mΩ for Q1 and 2.8 mΩ for Q2 at VGS = 5 V and ID = 20 A. Continuous drain current ratings are 10 A for Q1 and 40 A for Q2. Total gate charges are 4.3 nC for Q1 and 17 nC for Q2 under standard test conditions.

FET, MOSFET Arrays Feature Summary

• Asymmetrical half-bridge configuration integrating distinct high-side and low-side GaN transistors
• Zero reverse recovery charge (QRR) inherent to the majority carrier diode structure
• Passivated die construction with integrated solder bumps for direct board mounting
• Negative threshold voltage capability allowing 0 V turn-off for enhanced noise immunity

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Point-of-Load (POL) converter modules
• Class D audio amplifiers

FET, MOSFET Arrays Procurement Notes

Verify that the received component matches the EPC2101ENGRT designation and confirms the passivated die format with solder bumps. Ensure handling procedures account for the bare die nature of the package. Confirm moisture sensitivity level classification aligns with storage requirements before reflow soldering processes begin.

FET, MOSFET Arrays Selection Notes

Select this component when designing asymmetric half-bridges requiring different current handling capabilities for high-side versus low-side switching. The specific RDS(on) values suit applications prioritizing conduction loss reduction in the low-side switch while maintaining compact footprint density for high-frequency power stages.

FET, MOSFET Arrays Part Context

This part belongs to the EPC2101 series of eGaN® FETs manufactured by Efficient Power Conversion Corporation. It represents a discrete power semiconductor solution designed for integration into custom printed circuit boards rather than functioning as a pre-packaged integrated circuit driver.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented. Replacement requires matching the 60 V rating, asymmetrical RDS(on) characteristics, and compatible land pattern dimensions for the 6.05 x 2.3 mm die size.