EPC2103ENGRT

FET, MOSFET Arrays Overview

The EPC2103ENGRT is an enhancement-mode Gallium Nitride (GaN) power transistor configured as a half-bridge. It features a drain-to-source voltage rating of 80 V and a continuous drain current of 30 A at 25°C. The device exhibits a maximum on-resistance of 5.5 mΩ at VGS = 5 V and ID = 20 A. Dynamic characteristics include a typical total gate charge of 6.5 nC and input capacitance of 730 pF. Thermal resistance from junction to case is 0.3°C/W, supporting operation within a temperature range of -40°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge topology with two matched GaN FETs
• Lateral device structure providing zero reverse recovery charge
• Low thermal resistance for high-density mounting
• Passivated die form with solder bumps

FET, MOSFET Arrays Applications

• High frequency DC-DC conversion
• Motor drive systems

FET, MOSFET Arrays Procurement Notes

Verify the component is supplied in passivated die form with solder bumps. Confirm tape and reel specifications match the 8 mm pitch, 12 mm wide tape on a 7-inch reel configuration. Ensure handling procedures account for the moisture sensitivity level 1 classification during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high switching frequencies and low on-state losses. Evaluate thermal management based on the junction-to-case resistance of 0.3°C/W. Ensure gate driver capabilities support the specified 6 V maximum gate-to-source voltage and negative bias requirements.

FET, MOSFET Arrays Part Context

This part belongs to the eGaN® family of enhancement-mode power transistors manufactured by Efficient Power Conversion Corporation. It utilizes lateral GaN technology to achieve high electron mobility and low temperature coefficients, distinguishing it from traditional silicon-based MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the datasheet. When evaluating alternatives, verify compatibility with the specific half-bridge configuration, 80 V rating, and flip-chip solder bump package dimensions.