EPC2304ENGRT

$8.18

Description：TRANS GAN 200V .005OHM 3X5PQFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1e1ad77eb593 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 200V .005OHM 3X5PQFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：102A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id：2.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：3195 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：7-QFN (3x5)
Package / Case：7-PowerWQFN

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EPC2304ENGRT

Overview

The EPC2304ENGRT is a GaN FET bump die with a 200V drain-source voltage rating. It features an N-channel enhancement-mode architecture designed for high-frequency power conversion. The device supports a continuous drain current of 11A at 25°C ambient temperature and achieves a maximum on-resistance of 25mΩ at 20A with a 5V gate drive. It operates within a junction temperature range of -40°C to 150°C, utilizing a surface-mount installation type.

Feature Summary

Utilizes Gallium Nitride (GaN) technology for enhanced switching performance
Engineered as a bumped die for direct integration into advanced packaging solutions
Supports series connection applications via Active Gate Driving techniques for voltage balancing

Applications

Higher voltage applications requiring series connected GaN devices
DC link circuits operating at 300V or similar levels
High-frequency power conversion systems

Procurement Notes

Verify the specific engineering revision suffix 'ENGRT' against the manufacturer's latest preliminary specification sheet to ensure compatibility with intended design requirements. Confirm that the bumped die form factor aligns with the target substrate or package assembly process. Validate thermal management strategies for the specified junction temperature range during final system integration.

Selection Notes

Select this component when designing circuits requiring a 200V rated GaN transistor in a bare die format. Consider its low gate charge and fast switching characteristics for high-efficiency topologies. Ensure the driving circuitry can handle the required gate voltage limits and provides adequate protection against overvoltage conditions during transient events.

Part Context

This part belongs to the EPC family of enhancement-mode power transistors built on Gallium Nitride technology. These components are characterized by superior electron mobility compared to traditional silicon MOSFETs, enabling higher power density and efficiency in compact designs suitable for modern electronic systems.