EPC2305

$7.00

Description：TRANS GAN 150V .0022OHM 3X5 7QFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:46903950df55 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 150V .0022OHM 3X5 7QFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：102A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id：2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs：28.6 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：4165 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：7-QFN (3x5)
Package / Case：7-PowerWQFN

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EPC2305

Overview

The EPC2305 is an enhancement-mode Gallium Nitride (GaN) power transistor from Efficient Power Conversion. It features a 150V continuous drain-source breakdown voltage and a typical on-resistance of 2.2mΩ, with a maximum of 3mΩ. The device utilizes a low-inductance 3mm x 5mm QFN package with an exposed top for thermal management. Key electrical characteristics include ultra-low gate charge and zero reverse recovery charge, enabling high-frequency operation.

Feature Summary

Zero reverse recovery charge eliminates switching losses associated with body diode conduction.
Ultra-low gate charge reduces driver requirements and switching energy loss.
Thermally enhanced package with exposed top provides excellent heat dissipation capabilities.
Simplified gate drive requirements operate effectively with standard 5V logic levels.

Applications

High-frequency DC-DC converters
AC-DC chargers and adapters for mobile devices
BLDC motor drives for e-mobility and robotics
Solar optimizers and maximum power point tracking systems

Procurement Notes

Verify the specific datasheet revision to confirm parameter tolerances and thermal resistance values. Ensure the ordering part number matches the required package variant. Confirm moisture sensitivity level ratings if the design requires specific reflow profiles. Cross-reference official documentation for any updates regarding absolute maximum ratings or recommended operating conditions prior to final implementation.

Selection Notes

Select this component for designs requiring high power density and efficiency in compact form factors. The 150V rating suits applications involving 96V battery systems or intermediate bus architectures. Consider the thermal performance benefits of the exposed pad for high-current scenarios. Evaluate the zero reverse recovery characteristic for synchronous rectification or hard-switching topologies where diode recovery losses are critical.

Part Context

The EPC2305 belongs to the eGaN FET family, representing a shift from traditional silicon MOSFETs to wide-bandgap semiconductor technology. This series emphasizes reduced footprint and improved thermal management through specialized packaging. It complements other voltages in the lineup, offering designers flexibility in balancing on-resistance and cost within standardized board layouts.