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The EPC2308 is an enhanced Gallium Nitride (eGaN) field-effect transistor manufactured by EPC. It features a drain-source voltage rating of 150 V and a maximum on-resistance of 6 mΩ at 15 A and 5 V gate-source voltage. The device supports a continuous drain current of 48 A at case temperature. Key electrical parameters include a maximum gate charge of 13.8 nC at 5 V, a maximum input capacitance of 2103 pF at 75 V, and a gate-source threshold voltage of 2.5 V at 5 mA. The component operates within a junction temperature range of -40°C to 150°C and utilizes a 7-PowerWQFN package with dimensions of 3 mm x 5 mm.
Verify the specific ordering suffix to confirm packaging type, such as tape and reel or cut tape, as these affect handling procedures. Confirm RoHS compliance status and moisture sensitivity level requirements before integration into manufacturing processes. Ensure that the selected variant matches the required lead time and availability constraints for the production schedule.
Select this component when designing circuits requiring 150 V blocking capability with minimal conduction losses. The 3x5 mm footprint allows for high-density layouts compared to larger packages. Consider the thermal management capabilities of the exposed pad design for high-current applications. Verify compatibility with existing driver circuits given the 5 V drive requirement for optimal on-state performance.
The EPC2308 belongs to EPC's eGaN FET family, designed for high-frequency power conversion. It shares pinout compatibility with previous 100 V devices like the EPC2302 and EPC2306, facilitating design upgrades. This series targets applications demanding high power density and efficiency in compact form factors.
The EPC2308 is pin-compatible with the EPC2302 and EPC2306. Designers upgrading from these 100 V devices should verify that the system voltage does not exceed the new 150 V rating limits and adjust thermal designs accordingly.