EPC23103ENGRT

Full Half-Bridge (H Bridge) Drivers Overview

The EPC23103ENGRT is a monolithic half-bridge power stage integrating GaN FETs and gate drivers in a 13-WQFN-HR package. It operates with supply voltages from 10V to 80V, delivering 25A continuous output current and 109A peak current. The device features a typical on-resistance of 7.6 milliohms for both low-side and high-side switches. Designed for surface-mount installation, it supports logic interfaces and includes bootstrap circuitry. The component functions within a junction temperature range of -40°C to 125°C.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates GaN FETs with dedicated gate drivers in a compact monolithic structure
• Includes built-in bootstrap circuitry for high-side switching operations
• Features controlled slew rate management for optimized switching performance
• Provides comprehensive fault protection against short circuits, overvoltage, and ESD events

Full Half-Bridge (H Bridge) Drivers Applications

• DC motor drives
• DC-DC converters

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific ordering suffix (ENGRT) to confirm the tape and reel packaging configuration. Confirm availability status as the product may be discontinued or subject to limited supply constraints. Ensure compatibility with the required 13-WQFN-HR footprint during PCB layout verification. Check for any recent engineering change notices affecting pinout or electrical characteristics before finalizing procurement.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component for applications requiring high-efficiency power conversion with integrated control. The wide supply voltage range accommodates various bus architectures. Ensure thermal management strategies align with the 125°C maximum junction temperature rating. Verify that the load type remains within capacitive and resistive limits specified for stable operation. Consider the 25A continuous current capability when sizing heat dissipation paths.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the ePower series from EPC, focusing on integrated GaN power stages. It combines power switching elements with driver logic to simplify design complexity. The technology leverages gallium nitride properties for improved efficiency compared to traditional silicon devices. The series targets modern power electronics demanding high power density and fast switching speeds.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.