EPC2367ENGRT

$5.86

Description：TRANS GAN 100V .0012OHM 5QFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fbda95cd565a Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：TRANS GAN 100V .0012OHM 5QFN
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：78A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id：2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：5-QFN (3.3x3.3)
Package / Case：5-PowerWQFN

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EPC2367ENGRT

Overview

The EPC2367 is a 100 V enhancement-mode eGaN power transistor in a 5-QFN package. It features an on-resistance of 1.2 mΩ at 5V gate drive and supports continuous drain current up to 101A. The device exhibits low gate charge (17 nC) and input capacitance (2170 pF). Operating temperature ranges from -40°C to 150°C TJ.

Feature Summary

Enhancement-mode GaN technology for high efficiency
Exposed silicon top for thermal management
Wettable flanks for reliable surface mount assembly

Applications

48 V intermediate voltage bus architectures
AI server power supplies
Robotics power systems
Automotive power electronics

Procurement Notes

Verify the specific ordering suffix 'ENGRT' against official manufacturer documentation to confirm reel quantity and tape specifications. Ensure compatibility with standard QFN reflow profiles. Confirm RoHS3 compliance status for your region. Cross-reference the DigiKey part number 917-EPC2367TR-ND for accurate packaging details before procurement.

Selection Notes

Select this component for applications requiring high current density and fast switching speeds. The 100V rating suits 48V bus systems. Consider the 5-QFN package size for space-constrained designs. Evaluate thermal performance based on the exposed pad design. Verify gate drive requirements match the 5V threshold characteristics.

Part Context

Part of the eGaN FET family, designed to replace silicon MOSFETs. Offers superior performance in power conversion. Manufactured by Efficient Power Conversion (EPC). Targets modern high-efficiency power supply designs.