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Product Detailed Parameters
- Description：GAN FET HEMT 40V30A COTS 4FSMD-B
- Series：-
- Mfr：EPC Space, LLC
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The EPC7001BC is a single N-channel Gallium Nitride (GaN) power transistor manufactured by EPC Space, LLC. It features a Drain-to-Source Voltage (Vdss) of 40 V and supports a continuous drain current (Id) of 50 A at case temperature. The device exhibits a typical on-resistance (Rds(on)) of 11 mΩ. It is housed in a surface-mount FSMD-B package, designed for high-efficiency power conversion applications requiring low conduction losses and fast switching capabilities.
Feature Summary
- Utilizes Gallium Nitride (GaN) technology for enhanced power density
- Low on-resistance for reduced conduction losses
- Surface-mount FSMD-B package for compact integration
Applications
- Point-of-load DC-DC converters
- High-frequency power supplies
- Battery management systems
Procurement Notes
Verify the specific datasheet revision and screening level requirements with the manufacturer or authorized distributor before procurement. Ensure that thermal management solutions are compatible with the FSMD-B package specifications to maintain reliability under the rated 50 A continuous drain current conditions.
Selection Notes
Select this component when designing circuits requiring a 40 V rating with high current handling capability. The low Rds(on) makes it suitable for applications prioritizing efficiency over voltage blocking. Confirm that the gate drive requirements align with GaN transistor characteristics to prevent false triggering.
Part Context
This part belongs to the EPC Space single FET MOSFET/GaN transistor lineup. It represents a discrete power switch solution within their portfolio of wide-bandgap semiconductors, distinct from integrated half-bridge or multi-FET modules.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult EPC Space technical support for direct replacements or pin-compatible alternatives.
