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Product Detailed Parameters
- Description：GAN FET HEMT 40V 8A COTS 4FSMD-A
- Series：-
- Mfr：EPC Space, LLC
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The EPC7002AC is a radiation-hardened enhancement-mode Gallium Nitride (GaN) power transistor manufactured by EPC Space, LLC. It features an N-channel lateral structure designed for high-efficiency switching in demanding environments. Key electrical specifications include a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 15 A at case temperature. The device exhibits a typical on-resistance (R_DS(on)) ranging from 24 to 28 mΩ. Packaged in the 4FSMD-A surface-mount format, it integrates low gate charge and fast switching capabilities suitable for space-grade applications.
Feature Summary
- Radiation-hardened design for reliable operation in space and deep-space environments
- Lateral GaN structure enabling extremely fast switching times and very low gate charge
- Enhancement-mode operation providing inherent safety against false turn-on events
Applications
- Space DC-DC power conversion systems
- Commercial satellite electronic power systems (EPS)
- High-resolution lidar systems for aerospace use
- Ion thruster motor drives
- Satellite avionics
Procurement Notes
Verify the specific suffix 'AC' against the official EPC Space datasheet to confirm the exact package variant and radiation tolerance levels. Ensure that the 4FSMD-A footprint matches your PCB layout requirements. Confirm that the 15 A current rating aligns with your thermal management strategy under case temperature conditions. Validate that the component meets the specific total ionizing dose (TID) and displacement damage requirements for your mission profile before final procurement.
Selection Notes
Select the EPC7002AC when radiation hardness is mandatory for space or high-altitude applications requiring 40 V blocking capability. Its lateral GaN architecture offers superior switching speed compared to traditional silicon MOSFETs, improving efficiency in DC-DC converters and motor drives. Consider the 24–28 mΩ on-resistance for conduction loss calculations. The 4FSMD-A package is suitable for surface-mount assembly where compact form factors are required for avionics or payload integration.
Part Context
The EPC7002AC belongs to EPC Space’s family of rad-hard GaN HEMTs, distinct from commercial EPC devices. While sharing the 40 V rating with other models like the EPC7066PC, it is optimized for specific space applications including ion thrusters and lidar. It differs from standard commercial GaN FETs by incorporating radiation-tolerant design features to withstand orbital environments without performance degradation.
Replacement Considerations
No direct public substitute part numbers are confirmed for this specific rad-hard variant. Cross-referencing requires matching radiation hardness levels, 40 V rating, and 4FSMD-A package. Consult EPC Space for updated preferred alternatives within their rad-hard portfolio.
