SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The EPC7002ASH is a radiation-hardened eGaN FET with a 40V drain-source voltage rating and 15A continuous drain current. It features an extremely low on-resistance of 28mΩ and utilizes a lateral die structure for very low gate charge and fast switching times. The component is housed in a 4FSMD-A surface-mount package, designed for high-efficiency power switching in demanding environments.
Verify the specific suffix 'ASH' to confirm the 4FSMD-A package and 28mΩ Rds(on) variant. Confirm radiation hardness qualification status if required for mission-critical deployment. Check manufacturer lead times as standard availability may vary for rad-hard components.
Select this part for applications requiring 40V blocking capability with high current handling in radiation-exposed environments. Compare gate charge and switching speed against commercial alternatives to evaluate efficiency gains in high-frequency converters.
Part of the EPC Space rad-hard GaN HEMT family, including variants like EPC7001BSH. Designed specifically for aerospace and deep space missions where radiation tolerance and reliability are critical operational requirements.
No direct public substitute part numbers are confirmed for this specific rad-hard configuration. Evaluate EPC7001BSH only if higher current capacity is acceptable and package compatibility allows.