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Product Detailed Parameters
- Description：GAN FET HEMT 60V 1A 4UB
- Series：e-GaN®
- Mfr：EPC Space, LLC
- Package：Bulk
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：580mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-SMD
- Package / Case：4-SMD, No Lead
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FAQ
Is the EPC7014UBSH a standard commercial component?
No verified public datasheet or technical specification is available for this part number. It may be a specialized, legacy, or restricted aerospace component.
Where can I find the electrical parameters for this device?
Publicly accessible documentation containing voltage ratings, current limits, or pin configurations is not currently indexed in open databases.
