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The ES6U1T2R is a P-Channel MOSFET with an integrated Schottky Barrier Diode (SBD) manufactured by ROHM Semiconductor. It features a drain-source voltage of 12V and a continuous drain current of 1.3A. The device utilizes the EMT package, providing a compact surface-mount solution for power management applications.
Verify the specific datasheet revision to confirm electrical characteristics and pinout compatibility before integration. Ensure the selected component matches the required thermal dissipation capabilities for the intended application environment. Cross-reference ordering codes with official manufacturer documentation to avoid substitution errors.
Select this component when a compact dual-function solution combining switching and diode rectification is required. Evaluate the 12V rating against system voltage peaks. Consider the EMT package constraints for PCB layout and thermal design relative to the 1.3A current requirement.
This part belongs to ROHM's lineup of small signal and power MOSFETs designed for portable electronics and industrial control. The EMT packaging family offers high-density mounting options suitable for space-constrained designs requiring reliable semiconductor switching performance.
Consult official ROHM documentation for verified substitute part numbers within the same series or equivalent specifications from other manufacturers.