ETD630N16P60HPSA1

Overview

The Infineon Technologies ETD630N16P60HPSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate with a 60 mm footprint. Key electrical parameters include a repetitive peak forward off-state and reverse voltage of 1600 V, a maximum RMS on-state current of 700 A, and an average on-state current of 635 A at TC=85°C. The surge current rating reaches 19800 A at Tvj=25°C for 10ms. The threshold voltage is 0.8 V, slope resistance is 0.287 mΩ, and the junction-to-case thermal resistance is 0.06 K/W.

Feature Summary

• Pressure contact technology ensures high reliability and robust mechanical connections.
• Advanced Medium Power Technology (AMPT) optimizes performance for medium power applications.
• Industrial standard package design facilitates integration into existing systems.
• Electrically insulated base plate provides basic insulation compliant with Class 1 safety standards.

Applications

• Soft starters
• Rectifiers for drive applications
• Crowbar applications
• Power controllers
• Static switches

Procurement Notes

Verify the specific ordering suffix to confirm the inclusion of pre-applied thermal interface material (TIM), as indicated by the HPSA1 designation in official documentation. Confirm that the component meets RoHS requirements before finalizing procurement. Ensure the supply chain source is authorized to guarantee product authenticity and traceability. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.

Selection Notes

Select this module when a 1600 V blocking capability and high surge current handling are required for phase control or rectification. Evaluate the thermal management strategy based on the 0.06 K/W junction-to-case resistance and the 135°C maximum junction temperature limit. Consider the 60 mm industrial standard package dimensions for mechanical fit within the target enclosure layout.

Part Context

This component belongs to the eTT630N16P60 series of network thyristor modules from Infineon Technologies. It is designed for high-power industrial applications requiring reliable phase control. The module integrates silicon pellets using pressure contact technology within an insulated housing structure.

Replacement Considerations

Consult the official short form catalog for direct equivalents. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers. Ensure the replacement part supports the same 1600 V rating and 635 A average current capacity.

FAQ

What is the critical rate of rise of on-state current?

The critical rate of rise of on-state current ((diT/dt)cr) is specified as 200 A/µs under test conditions of f = 50Hz, iGM = 1A, and diG/dt = 1A/µs.

What is the maximum gate trigger current?

The maximum gate trigger current (IGT) is 250 mA, measured at a junction temperature of 25°C and a device voltage of 12V.

What is the holding current specification?

The maximum holding current (IH) is 300 mA, determined at a junction temperature of 25°C, a device voltage of 12V, and a load resistance of 1Ω.